TPAR3J S1G

制造商零件号
TPAR3J S1G
制造商
Taiwan Semiconductor
包装/案例
-
数据表
TPAR3J S1G
描述
DIODE AVALANCHE 600V 3A TO277A
库存
2849

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制造商 :
Taiwan Semiconductor
产品分类 :
分立半导体产品 > 二极管 - 整流器 - 单
Capacitance @ Vr, F :
58pF @ 4V, 1MHz
Current - Average Rectified (Io) :
3A
Current - Reverse Leakage @ Vr :
10 µA @ 600 V
Diode Type :
Avalanche
Mounting Type :
Surface Mount
Operating Temperature - Junction :
-55°C ~ 175°C
Package / Case :
TO-277, 3-PowerDFN
Product Status :
Active
Reverse Recovery Time (trr) :
120 ns
Speed :
Fast Recovery =< 500ns, > 200mA (Io)
Supplier Device Package :
TO-277A (SMPC)
Voltage - DC Reverse (Vr) (Max) :
600 V
Voltage - Forward (Vf) (Max) @ If :
1.55 V @ 3 A
数据列表
TPAR3J S1G

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