2SA11230RA

制造商 :

Panasonic

产品分类 :

分立半导体产品 > 晶体管 - 双极 (BJT) - 单

Current - Collector (Ic) (Max) :

50 mA

Current - Collector Cutoff (Max) :

1µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

130 @ 10mA, 5V

Frequency - Transition :

200MHz

Mounting Type :

Through Hole

Operating Temperature :

150°C (TJ)

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) Formed Leads

Power - Max :

750 mW

Product Status :

Obsolete

Supplier Device Package :

TO-92-B1

Transistor Type :

PNP

Vce Saturation (Max) @ Ib, Ic :

1V @ 3mA, 30mA

Voltage - Collector Emitter Breakdown (Max) :

150 V