RM2004NE

制造商 :

Rectron USA

产品分类 :

分立半导体产品 > 晶体管 - FET、MOSFET - 阵列

Current - Continuous Drain (Id) @ 25°C :

6A (Ta)

Drain to Source Voltage (Vdss) :

20V

FET Feature :

Standard

FET Type :

2 N-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs :

8nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

650pF @ 10V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

SOT-23-6

Power - Max :

1.25W (Ta)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

24mOhm @ 6A, 10V

Supplier Device Package :

SOT-23-6

Vgs(th) (Max) @ Id :

1V @ 250µA