TW083N65C,S1F

制造商 :

Toshiba Electronic Devices and Storage Corporation

产品分类 :

分立半导体产品 > 晶体管 - FET、MOSFET - 单

Current - Continuous Drain (Id) @ 25°C :

30A (Tc)

Drain to Source Voltage (Vdss) :

650 V

Drive Voltage (Max Rds On, Min Rds On) :

18V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

28 nC @ 18 V

Input Capacitance (Ciss) (Max) @ Vds :

873 pF @ 400 V

Mounting Type :

Through Hole

Operating Temperature :

175°C

Package / Case :

TO-247-3

Power Dissipation (Max) :

111W (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

113mOhm @ 15A, 18V

Supplier Device Package :

TO-247

Technology :

SiC (Silicon Carbide Junction Transistor)

Vgs (Max) :

+25V, -10V

Vgs(th) (Max) @ Id :

5V @ 600µA