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TK190E65Z,S1X
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- 制造商 :
- Toshiba Electronic Devices and Storage Corporation
- 产品分类 :
- 分立半导体产品 > 晶体管 - FET、MOSFET - 单
- Current - Continuous Drain (Id) @ 25°C :
- 15A (Ta)
- Drain to Source Voltage (Vdss) :
- 650 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 10V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 25 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1370 pF @ 300 V
- Mounting Type :
- Through Hole
- Operating Temperature :
- 150°C
- Package / Case :
- TO-220-3
- Power Dissipation (Max) :
- 130W (Tc)
- Product Status :
- Active
- Rds On (Max) @ Id, Vgs :
- 190mOhm @ 7.5A, 10V
- Supplier Device Package :
- TO-220
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±30V
- Vgs(th) (Max) @ Id :
- 4V @ 610µA
- 数据列表
- TK190E65Z,S1X
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