3N163-E3

制造商 :

Vishay

产品分类 :

分立半导体产品 > 晶体管 - FET、MOSFET - 单

Current - Continuous Drain (Id) @ 25°C :

50mA (Ta)

Drain to Source Voltage (Vdss) :

40 V

Drive Voltage (Max Rds On, Min Rds On) :

20V

FET Feature :

-

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

-

Input Capacitance (Ciss) (Max) @ Vds :

3.5 pF @ 15 V

Mounting Type :

Through Hole

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-206AF, TO-72-4 Metal Can

Power Dissipation (Max) :

375mW (Ta)

Product Status :

Obsolete

Rds On (Max) @ Id, Vgs :

250Ohm @ 100µA, 20V

Supplier Device Package :

TO-72

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±30V

Vgs(th) (Max) @ Id :

5V @ 10µA