PUMD12,135

Hersteller :

NXP Semiconductors

Produktkategorie :

Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Current - Collector (Ic) (Max) :

100mA

Current - Collector Cutoff (Max) :

1µA

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA, 5V

Frequency - Transition :

230MHz, 180MHz

Mounting Type :

Surface Mount

Package / Case :

6-TSSOP, SC-88, SOT-363

Power - Max :

300mW

Product Status :

Active

Resistor - Base (R1) :

47kOhms

Resistor - Emitter Base (R2) :

47kOhms

Supplier Device Package :

SOT-363

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500µA, 10mA

Voltage - Collector Emitter Breakdown (Max) :

50V