BFP640FESDH6327XTSA1

Hersteller :

Infineon Technologies

Produktkategorie :

Discrete Semiconductor Products > Transistors - Bipolar (BJT) - RF

Current - Collector (Ic) (Max) :

50mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

110 @ 30mA, 3V

Frequency - Transition :

46GHz

Gain :

8B ~ 30.5dB

Mounting Type :

Surface Mount

Noise Figure (dB Typ @ f) :

0.55dB ~ 1.7dB @ 150MHz ~ 10GHz

Operating Temperature :

150°C (TJ)

Package / Case :

4-SMD, Flat Leads

Power - Max :

200mW

Product Status :

Active

Supplier Device Package :

4-TSFP

Transistor Type :

NPN

Voltage - Collector Emitter Breakdown (Max) :

4.7V