MUN5113T3G

Hersteller :

onsemi

Produktkategorie :

Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased

Current - Collector (Ic) (Max) :

100 mA

Current - Collector Cutoff (Max) :

500nA

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA, 10V

Frequency - Transition :

-

Mounting Type :

Surface Mount

Package / Case :

SC-70, SOT-323

Power - Max :

202 mW

Product Status :

Obsolete

Resistor - Base (R1) :

47 kOhms

Resistor - Emitter Base (R2) :

47 kOhms

Supplier Device Package :

SC-70-3 (SOT323)

Transistor Type :

PNP - Pre-Biased

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300µA, 10mA

Voltage - Collector Emitter Breakdown (Max) :

50 V