GE17045EEA3

Hersteller :

General Electric

Produktkategorie :

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays

Current - Continuous Drain (Id) @ 25°C :

425A (Tc)

Drain to Source Voltage (Vdss) :

1700V (1.7kV)

FET Feature :

Silicon Carbide (SiC)

FET Type :

6 N-Channel (3-Phase Bridge)

Gate Charge (Qg) (Max) @ Vgs :

1207nC @ 18V

Input Capacitance (Ciss) (Max) @ Vds :

29100pF @ 900V

Mounting Type :

Chassis Mount

Operating Temperature :

-55°C ~ 150°C (Tc)

Package / Case :

Module

Power - Max :

1250W (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

4.45mOhm @ 425A, 20V

Supplier Device Package :

-

Vgs(th) (Max) @ Id :

4.5V @ 160mA