TC8220K6-G

Hersteller-Teilenummer
TC8220K6-G
Hersteller
Microchip Technology
Paket/Karton
-
Datenblatt
TC8220K6-G
Beschreibung
MOSFET 2N/2P-CH 200V 12VDFN
Lagerbestand
35000

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Hersteller :
Microchip Technology
Produktkategorie :
Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays
Current - Continuous Drain (Id) @ 25°C :
-
Drain to Source Voltage (Vdss) :
200V
FET Feature :
Standard
FET Type :
2 N and 2 P-Channel
Gate Charge (Qg) (Max) @ Vgs :
-
Input Capacitance (Ciss) (Max) @ Vds :
56pF @ 25V
Mounting Type :
Surface Mount
Operating Temperature :
-55°C ~ 150°C (TJ)
Package / Case :
12-VFDFN Exposed Pad
Power - Max :
-
Product Status :
Active
Rds On (Max) @ Id, Vgs :
6Ohm @ 1A, 10V
Supplier Device Package :
12-DFN (4x4)
Vgs(th) (Max) @ Id :
2.4V @ 1mA
Datenblätter
TC8220K6-G

Herstellerbezogene Produkte

Katalogbezogene Produkte

  • EPC
    GANFET 2NCH 120V 3.4A DIE
  • EPC
    GAN TRANS SYMMETRICAL HALF BRIDG
  • ROHM Semiconductor
    MOSFET 2N-CH 1200V 300A
  • Toshiba Electronic Devices and Storage Corporation
    MOSFET 2 N-CHANNEL 20V 250MA US6
  • Diodes Incorporated
    MOSFET N/P-CH 20V SOT26

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