GAN063-650WSAQ
- Hersteller-Teilenummer
- GAN063-650WSAQ
- Hersteller
- Nexperia
- Paket/Karton
- -
- Datenblatt
- GAN063-650WSAQ
- Beschreibung
- GANFET N-CH 650V 34.5A TO247-3
- Lagerbestand
- 600
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- Hersteller :
- Nexperia
- Produktkategorie :
- Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 34.5A (Ta)
- Drain to Source Voltage (Vdss) :
- 650 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 10V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 15 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1000 pF @ 400 V
- Mounting Type :
- Through Hole
- Operating Temperature :
- -55°C ~ 175°C (TJ)
- Package / Case :
- TO-247-3
- Power Dissipation (Max) :
- 143W (Ta)
- Product Status :
- Active
- Rds On (Max) @ Id, Vgs :
- 60mOhm @ 25A, 10V
- Supplier Device Package :
- TO-247-3
- Technology :
- GaNFET (Cascode Gallium Nitride FET)
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 4.5V @ 1mA
- Datenblätter
- GAN063-650WSAQ
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GAN041-650WSBQ | Nexperia | 35,000 | GAN041-650WSB/SOT429/TO-247 |