FF200R12KT3HOSA1

Hersteller :

Infineon Technologies

Produktkategorie :

Discrete Semiconductor Products > Transistors - IGBTs - Modules

Configuration :

2 Independent

Current - Collector (Ic) (Max) :

-

Current - Collector Cutoff (Max) :

5 mA

IGBT Type :

Trench Field Stop

Input :

Standard

Input Capacitance (Cies) @ Vce :

14 nF @ 25 V

Mounting Type :

Chassis Mount

NTC Thermistor :

No

Operating Temperature :

-40°C ~ 125°C

Package / Case :

Module

Power - Max :

1050 W

Product Status :

Not For New Designs

Supplier Device Package :

Module

Vce(on) (Max) @ Vge, Ic :

2.15V @ 15V, 200A

Voltage - Collector Emitter Breakdown (Max) :

1200 V