FF200R12MT4

Hersteller :

Infineon Technologies

Produktkategorie :

Discrete Semiconductor Products > Transistors - IGBTs - Modules

Configuration :

Half Bridge

Current - Collector (Ic) (Max) :

295 A

Current - Collector Cutoff (Max) :

1 mA

IGBT Type :

Trench Field Stop

Input :

Standard

Input Capacitance (Cies) @ Vce :

14000 pF @ 25 V

Mounting Type :

Chassis Mount

NTC Thermistor :

Yes

Operating Temperature :

-40°C ~ 150°C (TJ)

Package / Case :

Module

Power - Max :

1.05 kW

Product Status :

Active

Supplier Device Package :

-

Vce(on) (Max) @ Vge, Ic :

2.15V @ 15V, 200A

Voltage - Collector Emitter Breakdown (Max) :

1200 V