IVCR1401DR

Hersteller-Teilenummer
IVCR1401DR
Hersteller
Inventchip Technology
Paket/Karton
-
Datenblatt
IVCR1401DR
Beschreibung
SIC MOSFET AND IGBT DRIVER, 4A,
Lagerbestand
3825

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Hersteller :
Inventchip Technology
Produktkategorie :
Power Management (PMIC) > Gate Drivers
Channel Type :
Single
Current - Peak Output (Source, Sink) :
4A, 4A
Driven Configuration :
Low-Side
Gate Type :
IGBT, SiC MOSFET
High Side Voltage - Max (Bootstrap) :
-
Input Type :
Non-Inverting
Logic Voltage - VIL, VIH :
1.7V, 1.6V
Mounting Type :
Surface Mount
Number of Drivers :
1
Operating Temperature :
-40°C ~ 125°C (TA)
Product Status :
Active
Rise / Fall Time (Typ) :
13ns, 13ns
Supplier Device Package :
8-SOIC
Voltage - Supply :
19V ~ 25V
Datenblätter
IVCR1401DR

Herstellerbezogene Produkte

  • Inventchip Technology
    SIC DIODE, 1200V 20A(10A/LEG), T
  • Inventchip Technology
    SIC DIODE, 1200V 30A(15A/LEG), T
  • Inventchip Technology
    SIC DIODE, 1200V 40A, TO-247-2
  • Inventchip Technology
    SIC DIODE, 650V 6A, TO-220-2
  • Inventchip Technology
    SIC DIODE, 650V 6A, DPAK

Katalogbezogene Produkte

  • EPC
    IC GATE DRVR HALF-BRIDGE 12WLCSP
  • Renesas Electronics Corporation
    IC GATE DRVR HIGH-SIDE 8TDFN
  • Diodes Incorporated
    IC GATE DRVR LOW-SIDE SOT26
  • Toshiba Electronic Devices and Storage Corporation
    IC GATE DRVR HIGH-SIDE 6WCSPE
  • Diodes Incorporated
    IC GATE DRVR LOW-SIDE SOT26

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