IR2011PBF

Hersteller-Teilenummer
IR2011PBF
Hersteller
Infineon Technologies
Paket/Karton
-
Datenblatt
IR2011PBF
Beschreibung
IC GATE DRV HI-SIDE/LO-SIDE 8DIP
Lagerbestand
35000

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Hersteller :
Infineon Technologies
Produktkategorie :
Power Management (PMIC) > Gate Drivers
Channel Type :
Independent
Current - Peak Output (Source, Sink) :
1A, 1A
Driven Configuration :
High-Side or Low-Side
Gate Type :
N-Channel MOSFET
High Side Voltage - Max (Bootstrap) :
200 V
Input Type :
Inverting
Logic Voltage - VIL, VIH :
0.7V, 2.2V
Mounting Type :
Through Hole
Number of Drivers :
2
Operating Temperature :
-40°C ~ 150°C (TJ)
Product Status :
Active
Rise / Fall Time (Typ) :
35ns, 20ns
Supplier Device Package :
8-PDIP
Voltage - Supply :
10V ~ 20V
Datenblätter
IR2011PBF

Herstellerbezogene Produkte

Katalogbezogene Produkte

  • EPC
    IC GATE DRVR HALF-BRIDGE 12WLCSP
  • Renesas Electronics Corporation
    IC GATE DRVR HIGH-SIDE 8TDFN
  • Diodes Incorporated
    IC GATE DRVR LOW-SIDE SOT26
  • Toshiba Electronic Devices and Storage Corporation
    IC GATE DRVR HIGH-SIDE 6WCSPE
  • Diodes Incorporated
    IC GATE DRVR LOW-SIDE SOT26

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