FN4L4M-T1B-A

メーカー :

Intersil (Renesas Electronics Corporation)

製品カテゴリ :

Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased

Current - Collector (Ic) (Max) :

100 mA

Current - Collector Cutoff (Max) :

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

85 @ 5mA, 5V

Frequency - Transition :

-

Mounting Type :

-

Package / Case :

-

Power - Max :

200 mW

Product Status :

Obsolete

Resistor - Base (R1) :

22 Ohms

Resistor - Emitter Base (R2) :

22 Ohms

Supplier Device Package :

-

Transistor Type :

NPN - Pre-Biased

Vce Saturation (Max) @ Ib, Ic :

200mV @ 250µ, 5mA

Voltage - Collector Emitter Breakdown (Max) :

50 V