BSC889N03MSG

メーカー部品番号
BSC889N03MSG
メーカー
Infineon Technologies
パッケージ/ケース
-
データシート
BSC889N03MSG
説明
N-CHANNEL POWER MOSFET
在庫
15000

見積依頼(RFQ)

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メーカー :
Infineon Technologies
製品カテゴリ :
Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
12A (Ta), 44A (Tc)
Drain to Source Voltage (Vdss) :
30 V
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds :
1500 pF @ 15 V
Mounting Type :
Surface Mount
Operating Temperature :
-55°C ~ 150°C (TJ)
Package / Case :
8-PowerTDFN
Power Dissipation (Max) :
2.5W (Ta), 28W (Tc)
Product Status :
Active
Rds On (Max) @ Id, Vgs :
9.1mOhm @ 30A, 10V
Supplier Device Package :
PG-TSDSON-8
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±20V
Vgs(th) (Max) @ Id :
2V @ 250µA
データシート
BSC889N03MSG

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