SPI07N60C3HKSA1
- メーカー部品番号
- SPI07N60C3HKSA1
- パッケージ/ケース
- -
- データシート
- SPI07N60C3HKSA1
- 説明
- MOSFET N-CH 650V 7.3A TO262-3
- 在庫
- 35000
見積依頼(RFQ)
- * 連絡先名:
- * 会社:
- * 電子メール:
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- * キャプチャ:
-
- メーカー :
- Infineon Technologies
- 製品カテゴリ :
- Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 7.3A (Tc)
- Drain to Source Voltage (Vdss) :
- 650 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 10V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 27 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 790 pF @ 25 V
- Mounting Type :
- Through Hole
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- TO-262-3 Long Leads, I²Pak, TO-262AA
- Power Dissipation (Max) :
- 83W (Tc)
- Product Status :
- Obsolete
- Rds On (Max) @ Id, Vgs :
- 600mOhm @ 4.6A, 10V
- Supplier Device Package :
- PG-TO262-3-1
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 3.9V @ 350µA
- データシート
- SPI07N60C3HKSA1
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