GT10J312(Q)

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Discrete Semiconductor Products > Transistors - IGBTs - Single

Current - Collector (Ic) (Max) :

10 A

Current - Collector Pulsed (Icm) :

20 A

Gate Charge :

-

IGBT Type :

-

Input Type :

Standard

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Power - Max :

60 W

Product Status :

Obsolete

Reverse Recovery Time (trr) :

200 ns

Supplier Device Package :

TO-220SM

Switching Energy :

-

Td (on/off) @ 25°C :

400ns/400ns

Test Condition :

300V, 10A, 100Ohm, 15V

Vce(on) (Max) @ Vge, Ic :

2.7V @ 15V, 10A

Voltage - Collector Emitter Breakdown (Max) :

600 V