0204-125

lang_0872 :

Microsemi

Категория товара :

Discrete Semiconductor Products > Transistors - Bipolar (BJT) - RF

Current - Collector (Ic) (Max) :

16A

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 1A, 5V

Frequency - Transition :

225MHz ~ 400MHz

Gain :

7dB ~ 8.5dB

Mounting Type :

Chassis Mount

Noise Figure (dB Typ @ f) :

-

Operating Temperature :

200°C (TJ)

Package / Case :

55JT

Power - Max :

270W

Product Status :

Obsolete

Supplier Device Package :

55JT

Transistor Type :

NPN

Voltage - Collector Emitter Breakdown (Max) :

60V