MRF8372R2

lang_0872 :

Microsemi

Категория товара :

Discrete Semiconductor Products > Transistors - Bipolar (BJT) - RF

Current - Collector (Ic) (Max) :

200mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 50mA, 5V

Frequency - Transition :

870MHz

Gain :

8dB ~ 9.5dB

Mounting Type :

Surface Mount

Noise Figure (dB Typ @ f) :

-

Operating Temperature :

-

Power - Max :

2.2W

Product Status :

Obsolete

Supplier Device Package :

8-SO

Transistor Type :

NPN

Voltage - Collector Emitter Breakdown (Max) :

16V