SSM6J214FE(TE85L,F
- Производитель-деталь №
- SSM6J214FE(TE85L,F
- Производитель
- Toshiba Electronic Devices and Storage Corporation
- Упаковка/футляр
- -
- Техническое описание
- SSM6J214FE(TE85L,F
- Описание
- MOSFET P-CH 30V 3.6A ES6
- lang_0071
- 25819
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- lang_0872 :
- Toshiba Electronic Devices and Storage Corporation
- Категория товара :
- Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 3.6A (Ta)
- Drain to Source Voltage (Vdss) :
- 30 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 1.8V, 10V
- FET Feature :
- -
- FET Type :
- P-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 7.9 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 560 pF @ 15 V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- 150°C
- Package / Case :
- SOT-563, SOT-666
- Power Dissipation (Max) :
- 500mW (Ta)
- Product Status :
- Active
- Rds On (Max) @ Id, Vgs :
- 50mOhm @ 3A, 10V
- Supplier Device Package :
- ES6
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±12V
- Vgs(th) (Max) @ Id :
- 1.2V @ 1mA
- lang_0258
- SSM6J214FE(TE85L,F
Продукты, связанные с производителем
Продукты, связанные с каталогом
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