IST007N04NM6AUMA1

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Infineon Technologies

Категория товара :

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

54A (Ta), 440A (Tc)

Drain to Source Voltage (Vdss) :

-

Drive Voltage (Max Rds On, Min Rds On) :

6V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

152 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

7900 pF @ 20 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 175°C (TJ)

Package / Case :

5-PowerSFN

Power Dissipation (Max) :

3.8W (Ta), 250W (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

700mOhm @ 100A, 10V

Supplier Device Package :

PG-HSOF-5-1

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

3.3V @ 250µA