SPB21N50C3ATMA1

lang_0872 :

Infineon Technologies

Категория товара :

Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

21A (Tc)

Drain to Source Voltage (Vdss) :

560 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

95 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

2400 pF @ 25 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Power Dissipation (Max) :

208W (Tc)

Product Status :

Not For New Designs

Rds On (Max) @ Id, Vgs :

190mOhm @ 13.1A, 10V

Supplier Device Package :

PG-TO263-3-2

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

3.9V @ 1mA